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PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING LITHIUM-BASED FILM BY USING THE SAME
专利权人:
Samsung Electronics Co., Ltd.
发明人:
LEE, Jooho,KIM, Yongsung,SONG, Sanghoon,YANG, Wooyoung,LEE, Changseung,LIM, Sungjin,HWANG, Junsik
申请号:
EP20170150850
公开号:
EP3270406(A1)
申请日:
2017.01.10
申请国别(地区):
欧洲专利局
年份:
2018
代理人:
摘要:
A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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