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SEMICONDUCTOR DEVICE HAVING A METAL OXIDE METAL (MOM) CAPACITOR AND A PLURALITY OF SERIES CAPACITORS AND METHOD FOR FORMING
专利权人:
FREESCALE SEMICONDUCTOR, INC.
发明人:
PRINZ ERWIN J.,JUNKER KURT H.
申请号:
US201514828723
公开号:
US2017053930(A1)
申请日:
2015.08.18
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
A capacitor module includes a semiconductor substrate of a first polarity. The substrate includes a deep well of a second polarity, a first well of the first polarity over the deep well, a second well of the second polarity over at least a portion of the deep well, a first capacitor including the first well as a first electrode, a dielectric layer over the first electrode, and an electrically conductive layer as a second electrode over the dielectric layer, and a second capacitor including the second well as a first electrode, a dielectric layer over the first electrode, and an electrically conductive layer as a second electrode over the dielectric layer. The first capacitor is coupled in series with the second capacitor. A metal-oxide-metal (MOM) capacitor overlays and is coupled in parallel with the first and second capacitors.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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