Materials for near field transducers and near field transducers containing same

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专利权人:

Seagate Technology LLC

发明人:

Jayashankar Sethuraman,Kautzky Michael C.

申请号：

US201615064977

公开号：

US9870793(B2)

申请日:

2016.03.09

申请国别(地区):

美国

年份:

2018

代理人:

Mueting, Raasch & Gebhardt, P.A.

摘要：

A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.

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中国工程科技知识中心

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