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PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING LITHIUM-BASED FILM BY USING THE SAME
专利权人:
SAMSUNG ELECTRONICS CO., LTD.
发明人:
LEE Jooho,KIM Yongsung,SONG Sanghoon,YANG Wooyoung,LEE Changseung,LIM Sungjin,HWANG Junsik
申请号:
US201615368892
公开号:
US2018010245(A1)
申请日:
2016.12.05
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.
来源网站:
中国工程科技知识中心
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http://www.ckcest.cn/home/

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