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COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) INVERTER CIRCUIT DEVICE
专利权人:
MagnaChip Semiconductor, Ltd.
发明人:
RYU Beom Seon,LIM Gyu Ho,KANG Tae Kyoung
申请号:
US201715398318
公开号:
US2017117894(A1)
申请日:
2017.01.04
申请国别(地区):
美国
年份:
2017
代理人:
摘要:
There is provided a CMOS inverter circuit device. The CMOS inverter circuit device includes a delay circuit unit configured to generate different charge and discharge paths of each gate node of a PMOS transistor and an NMOS transistor respectively at the time that an input signal transitions between high and low levels. Therefore, the present examples minimize or erase generation of a short circuit current made at the time that the input signal transition. The examples may simplify circuit architecture, and may make a magnitude of a CMOS inverter circuit device smaller.
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中国工程科技知识中心
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http://www.ckcest.cn/home/

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