ON-DIE TERMINATION CIRCUIT, A MEMORY DEVICE INCLUDING THE ON-DIE TERMINATION CIRCUIT, AND A MEMORY SYSTEM INCLUDING THE MEMORY DEVICE

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专利权人:

SAMSUNG ELECTRONICS CO., LTD.

发明人:

PARK JI-WOON,KIM BYUNG-HO

申请号：

US201715465771

公开号：

US2018026634(A1)

申请日:

2017.03.22

申请国别(地区):

美国

年份:

2018

代理人:

摘要：

An on-die termination (ODT) circuit connected to an input buffer that receives a data signal, the ODT circuit includes at least one termination resistor connected to the input buffer and at least one switching device configured to control a connection between the termination resistor and the input buffer. The switching device is turned on or off according to information about the data signal.

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中国工程科技知识中心

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