FIFE, KEITH G.,法菲 凯斯 Ｇ,法菲 凱斯 Ｇ,LIU, JIANWEI,刘 建威,劉 建威
申请号：
TW108107843
公开号：
TW201938834A
申请日:
2019.03.08
申请国别(地区):
TW
年份:
2019
代理人:
摘要：
Aspects of the technology described herein relate to ultrasound transducer devices including capacitive micromachined ultrasonic transducers (CMUTs) and methods for forming CMUTs in ultrasound transducer devices. Some embodiments include forming a cavity of a CMUT by forming a first layer of insulating material on a first substrate, forming a second layer of insulating material on the first layer of insulating material, and then etching a cavity in the second insulating material. A second substrate may be bonded to the first substrate to seal the cavity. The first layer of insulating material may include, for example, aluminum oxide. The first substrate may include integrated circuitry. Some embodiments include forming through-silicon vias (TSVs) in the first substrate prior to forming the first and second insulating layers (TSV-Middle process) or subsequent to bonding the first and second substrates (TSV-Last process).在此所述的技術的特點係有關於包含電容式微加工超音波換能器(CMUT)的超音波換能器裝置、以及用於在超音波換能器裝置中形成CMUT的方法。某些實施例係包含藉由在一第一基板上形成一第一層的絕緣材料、在該第一層的絕緣材料上形成一第二層的絕緣材料、並且接著在該第二絕緣材料中蝕刻一腔室，以形成一CMUT的一腔室。一第二基板可被接合至該第一基板以密封該腔室。該第一層的絕緣材料例如可包含鋁氧化物。該第一基板可包含積體電路。某些實施例係包含在形成該第一及第二絕緣層之前(TSV在中間的製程)、或是在接合該第一及第二基板之後(TSV在最後的製程)，以在該第一基板中形成矽通孔(TSV)。
