ALUMINUM COMPLEX DERIVATIVE FOR CHEMICAL VAPOR DEPOSITION AND PRODUCTION OF THE SAME DERIVATIVE

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专利权人:

ROHM & HAAS CO

发明人:

SHIN HYUN-KOOCK,SHIN HYUN-YOO

申请号：

JP19990116567

公开号：

JP2000026474(A)

申请日:

1999.04.23

申请国别(地区):

日本

年份:

2000

代理人:

摘要：

PROBLEM TO BE SOLVED: To obtain a new organometallic compound excellent in thermostability and useful for chemical vapor deposition, etc. SOLUTION: The new organometallic compound is expressed by the formula: H3Al:Ln [L is at least one of Lewis bases capable of giving Al lone pair, which are thiophenes, thiopyrans, or expressed by formula I or II (R is a 1-4C alkyl; R', R'', R35 to R38 are each H or a 1-2C alkyl; X is O or an alkyl-containing nitrogen); (n) is 1 or 2], e.g. 1-methylpyrrolidine alum. The compound of the formula: H3Al:Ln is obtained by forming a soil suspension of aluminum chloride and lithium aluminum hydride in hexane and then by adding a Lewis base such as 1-methylpyrrolidine to the suspension.

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