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PLASMA GENERATING DEVICE WITH OVERVOLTAGE SUPPRESSION ON THE TRANSISTOR TERMINALS OF A HIGH-VOLTAGE PSEUDOCLASS E GENERATOR
专利权人:
RENAULT S.A.S.
发明人:
AGNERAY, ANDRÉ,MALEK, NADIM
申请号:
EP20060831361
公开号:
EP1955433(B1)
申请日:
2006.11.20
申请国别(地区):
欧洲专利局
年份:
2016
代理人:
摘要:
The device has a plasma-generating plug with a capacitive inductive resonator (RS2), an oscillator (OSC) generating a high-frequency control pulse sequence, and a periodic pulse voltage generator (GENI) with a switching power transistor (M1). The transistor has a control electrode connected to the oscillator output and to a drain (D) delivering a voltage pulse sequence to the resonator in response to control pulses received on the electrode. A zener diode (D1) is connected between the drain and a source of the transistor and limits the voltage difference between the drain and source.
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中国工程科技知识中心
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