Cox Michael S.,Wang Rongping,West Brian T.,Johnson Roger M.,Dickinson Colin John
申请号：
US201514986070
公开号：
US9543124(B2)
申请日:
2015.12.31
申请国别(地区):
美国
年份:
2017
代理人:
Patterson & Sheridan, LLP
摘要：
Embodiments disclosed herein include a plasma source for abating compounds produced in semiconductor processes. The plasma source has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the cylindrical electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
