Andre Mercanzini,Alain Jordan,Alexandre Michalis,Marc Boers,Alain Dransart
申请号：
US15281468
公开号：
US10004895B2
申请日:
2016.09.30
申请国别(地区):
US
年份:
2018
代理人:
摘要：
The present disclosure discusses a system and methods for a deep brain stimulation lead. More particularly, the disclosure discusses a stimulation lead that includes one or more silicon based barrier layers within a MEMS film. The silicon based barrier layers can improve device reliability and durability. The silicon based barrier layers can also improve adhesion between the layers of the MEMS film.
