人工水晶の育成方法

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专利权人:

株式会社村田製作所

发明人:

西本 正俊,白井 雄,山口 清雄,設楽 卓巳

申请号：

JP20150534054

公开号：

JP6083474(B2)

申请日:

2014.06.26

申请国别(地区):

日本

年份:

2017

代理人:

摘要：

An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the pressure is being applied.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/