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人工水晶の育成冶具及び育成方法
专利权人:
京セラ株式会社
发明人:
曳地 信久,伊藤 光弘
申请号:
JP20140135485
公开号:
JP6290018(B2)
申请日:
2014.07.01
申请国别(地区):
日本
年份:
2018
代理人:
摘要:
PROBLEM TO BE SOLVED: To provide a raising tool and a raising method of artificial crystal capable of making a foreign matter density constant regardless of the size of artificial crystal.SOLUTION: In raising a plate or a rod of a seed crystal 40 to artificial crystal by a hydrothermal method, a raising tool 10 of artificial crystal used to dispose the seed crystal 40 in a pressure vessel is equipped with support bars 20 and inclined fasteners 30. Two or more of the support bars 20 are horizontally attached to a vertical frame 11, in which the vertical distance P between two attached support bars 20 is variable. The inclined fasteners 30 are attached to the support bars 20. The seed crystal 40 is fixed slantwise so that basic growth planes 43 and 44 of the seed crustal 40 are arranged at a predetermined angle &thetas; to the vertical direction.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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