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A STRAIN SENSING ELEMENT, HAVING A FIRST AND SECOND MAGNETIC LAYER AND A THIRD LAYER THAT IS ANTIFERRIMAGNETIC
专利权人:
Kabushiki Kaisha Toshiba
发明人:
Yoshihiko Fuji,Hideaki Fukuzawa,Shiori Kaji
申请号:
US15421283
公开号:
US20190239760A9
申请日:
2017.01.31
申请国别(地区):
US
年份:
2019
代理人:
摘要:
According to one embodiment, a strain sensing element provided on a deformable substrate includes: a first magnetic layer; a second magnetic layer; a spacer layer; and a bias layer. Magnetization of the second magnetic layer changes according to deformation of the substrate. The spacer layer is provided between the first magnetic layer and the second magnetic layer. The second magnetic layer is provided between the spacer layer and the bias layer. The bias layer is configured to apply a bias to the second magnetic layer.
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