Method for producing a buried contact Schottky logic array, and device produced thereby.

• 收藏
• 分享

专利权人:

TEXAS INSTRUMENTS INCORPORATED

发明人:

MORRIS, FRANCIS J.,EVANS, STEPHEN A.

申请号：

EP19860307941

公开号：

EP0226293(A2)

申请日:

1986.10.14

申请国别(地区):

欧洲专利局

年份:

1987

代理人:

摘要：

A Schottky diode includes a metal layer (62) on an epitaxial region (24). The metal layer is covered with a dielectric layer (64). An area (90) on the metal is exposed by opening a via (68) in the dielectric. The exposed area (90) is spaced from a buried perimeter (92) of the metal layer (62). A conductive lead (86) is formed in the Schottky via (68). A poly emitter terminal (46) connects a small sized emitter (50) formed in an epitaxial region (24) to the exterior. Poly emitter (46) presents a large area (76) to the exterior for alignment with a via (66) through a passivating dielectric layer (64), thus alleviating alignment problems.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/