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Method for removing of residual charge, X-ray imaging method and apparatus using the method
专利权人:
SAMSUNG ELECTRONICS CO., LTD.
发明人:
Kim Young,Kim Sunil,Park Jaechul,Lee Kangho
申请号:
US201414476069
公开号:
US9961754(B2)
申请日:
2014.09.03
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
A method of removing residual charge from a photoconductive material includes applying a first voltage to the photoconductive material to form an electrostatic field during a collection operation in which x-rays are irradiated onto the photoconductive material; and applying a second voltage to the photoconductor to reduce an amount of residual charge therein during a removal operation, the second voltage being different from the first voltage. In one or more example embodiments, the photoconductive material may include Mercury Iodine (Hgl2).
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