Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人:
Guo Yi,Mosley David,Penta Naresh Kumar
申请号：
US201715664544
公开号：
US10119048(B1)
申请日:
2017.07.31
申请国别(地区):
美国
年份:
2018
代理人:
Merriam Andrew`Piskorski John J
摘要：
The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions that comprise a mixture of one or more surfactants chosen from an amine alkoxylate, an ammonium alkoxylate, or mixtures thereof, and colloidal silica particles having at least one cationic species, the colloidal silica particles being present in the amount of from 1 to 30 wt. %, as solids based on the total weight of the composition, and the compositions having a pH ranging from 2 to 6. The surfactants have a hydrophobic tail. The CMP polishing compositions exhibit tunable oxide:polysilicon and oxide:nitride removal rate ratios and reduce both silicon nitride and polysilicon removal rates significantly without significantly reducing dielectric (e.g. TEOS) removal rates.
