ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC.;NITTA HAAS INC.
发明人:
BULICK, ALLEN S.,NISHIZAWA, HIDEAKI,MORIYAMA, KAZUKI,YOSHIDA, KOICHI,EZAWA, SHUNJI,ARUMUGAM, SELVANATHAN
申请号：
FR20140057981
公开号：
FR3009802(B1)
申请日:
2014.08.26
申请国别(地区):
法国
年份:
2018
代理人:
摘要：
A method of polishing a sapphire substrate is provided, comprising: providing a substrate having an exposed sapphire surface; providing a chemical mechanical polishing slurry, wherein the chemical mechanical polishing slurry comprises, as initial components: colloidal silica abrasive, wherein the colloidal silica abrasive has a negative surface charge; and, wherein the colloidal silica abrasive exhibits a multimodal particle size distribution with a first particle size maximum between 2 and 25 nm; and, a second particle size maximum between 75 and 200 nm; optionally, a biocide; optionally, a nonionic defoaming agent; and, optionally, a pH adjuster. A chemical mechanical polishing composition for polishing an exposed sapphire surface is also provided.
