Chung Woh Lai,Xiao Hu Liu,Anita Madan,Klaus W. Schwarz,J. Campbell Scott
申请号：
US14174868
公开号：
US08865571B2
申请日:
2014.02.07
申请国别(地区):
US
年份:
2014
代理人:
摘要：
A method for manipulating dislocations from a semiconductor device includes directing a light-emitting beam locally onto a surface portion of a semiconductor body that includes active regions of the semiconductor device and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam. Manipulating the plurality of dislocations includes directly scanning the plurality of dislocations with the light-emitting beam to manipulate a location of each of the plurality of dislocations on the surface portion of the semiconductor body by adjusting a temperature of the surface portion of the semiconductor body corresponding to the plurality of dislocations and adjusting a scan speed of the a light-emitting beam.
