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SYSTEMS AND METHODS FOR ULTRASOUND PULSE GENERATION USING GALLIUM NITRIDE FIELD EFFECT TRANSISTORS
专利权人:
EchoNous; Inc.
发明人:
Ronald W. Broad
申请号:
US15592655
公开号:
US20170326588A1
申请日:
2017.05.11
申请国别(地区):
US
年份:
2017
代理人:
摘要:
Circuits, devices and methods generating an ultrasound pulse are provided herein. An ultrasound probe includes an array of transducer elements configured to transmit an ultrasound signal toward a target structure in a region of interest, and an array of pulse generators for driving a respective transducer element. Each of the pulse generators are coupled to a respective transducer element and include a driver circuit configured to receive a control signal and to output a driving signal, a switching element coupled to the driver circuit, and a resonant circuit coupled to the switching element and the respective transducer element, wherein the resonant circuit is configured to provide a transmit pulse to the respective transducer element based on the driving signal. The switching element may comprise a gallium nitride field effect transistor (GaN FET).
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