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Integrated diode DAS detector
专利权人:
General Electric Company
发明人:
Naresh Kesavan Rao,James Wilson Rose,Christopher David Unger,Abdelaziz Ikhlef,Jonathan David Short
申请号:
US13857624
公开号:
US09689996B2
申请日:
2013.04.05
申请国别(地区):
US
年份:
2017
代理人:
摘要:
Improved imaging systems are disclosed. More particularly, the present disclosure provides for an improved image sensor assembly for an imaging system, the image sensor assembly having an integrated photodetector array and its associated data acquisition electronics fabricated on the same substrate. By integrating the electronics on the same substrate as the photodetector array, this thereby reduces fabrications costs, and reduces interconnect complexity. Since both the photodiode contacts and the associated electronics are on the same substrate/plane, this thereby substantially eliminates certain expensive/time-consuming processing techniques. Moreover, the co-location of the electronics next to or proximal to the photodetector array provides for a much finer resolution detector assembly since the interconnect bottleneck between the electronics and the photodetector array is substantially eliminated/reduced. The co-location of the electronics next to or proximal to the photodetector array also enables/facilitates programmable pixel configuration for optimal image quality.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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