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Integrated circuit device with adaptations for multiplexed biosensing
专利权人:
Taiwan Semiconductor Manufacturing Co., Ltd.
发明人:
Liu Yi-Shao,Huang Jui-Cheng,Chen Tung-Tsun
申请号:
US201715492548
公开号:
US10139364(B2)
申请日:
2017.04.20
申请国别(地区):
美国
年份:
2018
代理人:
Sterne, Kessler, Goldstein & Fox P.L.L.C.
摘要:
A device layer of an integrated circuit device includes a semiconductor active layer spanning a plurality of device regions. Each of the device regions has a heating element, a temperature sensor, and bioFETs in the device layer. The bioFETs have source/drain regions and channel regions in the semiconductor active layer and fluid gates exposed on a surface for fluid interfacing on one side of the device layer. A multilayer metal interconnect structure is disposed on the opposite side of the device layer. This structure places the heating elements in proximity to the fluid gates enabling localized heating, precision heating, and multiplexed temperature control for multiplexed bio-sensing applications.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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