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GAS PROCESSING APPARATUS
专利权人:
Kabushiki Kaisha Toshiba
发明人:
Akio UI,Masato AKITA,Yosuke SATO
申请号:
US16111396
公开号:
US20190282722A1
申请日:
2018.08.24
申请国别(地区):
US
年份:
2019
代理人:
摘要:
A gas processing apparatus of an embodiment includes a gas processing unit, a flow forming unit, an AC power supply, and first and second filters. The gas processing unit includes a plurality of stacks each having a dielectric substrate, a first to a third electrode. The flow forming unit forms a flow of a target gas flowing toward the gas processing unit. The AC power supply applies an AC voltage across the first, second electrodes and the third electrode so as to generate plasma induced flows of the target gas between the dielectric substrates. The first filter is disposed at an upstream of the gas processing unit, and removes ozone. The second filter is disposed at a downstream of the gas processing unit, and removes ozone.
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