In the imaging module 1, a plurality of semiconductor elements 10 and 20 are stacked via the sealing layer 30, and the signal is transmitted through the signal cable 41 connected to the rear surface, and the first semiconductor element 10 is A semiconductor circuit portion 11 is provided in the central region S1 of the main surface 10SA of FIG. 1 and the through wiring 12 is provided in the middle region S2 and connected to the central region S1 of the second main surface 10SB with the through wiring 12 The second semiconductor element 20 has the electrode 13, the second electrode 23 in the central region S1 of the third main surface 20SA, and the external connection terminal 29 to which the signal cable 41 is connected in the rear surface 20SB. The sealing layer 30 is disposed in the first sealing layer 31 disposed in the central region S1 and in the outer circumferential region S3 surrounding the middle region S2, and the Young's modulus is higher than that of the first sealing layer 31. And a second sealing layer 32 having a small size.撮像モジュール１は、複数の半導体素子１０、２０が封止層３０を介して積層されており、後面に接続される信号ケーブル４１を介して信号を伝送し、第１の半導体素子１０が、第１の主面１０ＳＡの中央領域Ｓ１に半導体回路部１１を有し中間領域Ｓ２に貫通配線１２を有し、第２の主面１０ＳＢの中央領域Ｓ１に貫通配線１２と接続されている第１の電極１３を有し、第２の半導体素子２０が第３の主面２０ＳＡの中央領域Ｓ１に第２の電極２３を有し、後面２０ＳＢに信号ケーブル４１が接続される外部接続端子２９を有し、そして、封止層３０が、中央領域Ｓ１に配設されている第１の封止層３１と、中間領域Ｓ２を囲む外周領域Ｓ３に配設され第１の封止層３１よりもヤング率の小さい第２の封止層３２と、を含む。
