PROBLEM TO BE SOLVED: To form a textured structure in a deposition apparatus for depositing a GaN layer.SOLUTION: A nitride semiconductor light-emitting diode 10A including a support substrate 11, at least an n-GaN layer 14, a p-GaN layer 16 and a light-emitting layer 15 sandwiched between the n-GaN layer 14 and the p-GaN layer 16 on a surface of the support substrate, there are a plurality of recesses (especially conical shape) having different radiuses in a mixed manner on a surface of the p-GaN layer on the side opposite to the substrate. In addition, the recesses are formed by annealing at a crystal growth temperature and in a corrosive gas atmosphere (in an ammonia gas atmosphere or in a hydrazine atmosphere) and have radiuses within a range of 1-20 μm.
