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GAS SENSOR
专利权人:
HITACHI, LTD.
发明人:
SASAGO Yoshitaka,USAGAWA Toshiyuki,NAKAMURA Hitoshi
申请号:
US201715788308
公开号:
US2018120253(A1)
申请日:
2017.10.19
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
In a gas sensor using a first FET-type sensor for a sensor unit, a gas density measurement unit measures a gas density of gas to be detected at a predetermined time on the basis of a first threshold change as a difference between a first threshold voltage applied to a first gate layer when a first source-drain current is a first threshold current while the gas to be detected is not present in the atmosphere and a second threshold voltage applied to the first gate layer when the first source-drain current is the first threshold current at the predetermined time while the gas to be detected is present in the atmosphere, and a temporal differentiation of the first threshold change.
来源网站:
中国工程科技知识中心
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http://www.ckcest.cn/home/

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