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Device and method for surface profilometry for the control of wafers during processing
专利权人:
UNITY SEMICONDUCTOR
发明人:
Fresquet Gilles
申请号:
US201515513524
公开号:
US9958261(B2)
申请日:
2015.09.18
申请国别(地区):
美国
年份:
2018
代理人:
Greer, Burns & Crain, Ltd.
摘要:
A device or apparatus is provided for carrying out measurements of shape on a first surface of a wafer relative to structures present beneath the first surface including (i) profilometry apparatus arranged in order to carry out measurements of shape on the first surface of the wafer according to at least one measurement field; (ii) imaging apparatus facing the profilometry apparatus and arranged in order to acquire a reference image of the structures on or through a second surface of the wafer opposite to the first surface according to at least one imaging field; the profilometry apparatus and said imaging apparatus being arranged so that the measurement and imaging fields are referenced in position within a common frame of reference.;A method is also provided to be implemented in this device or this apparatus.
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