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気相成長装置および気相成長方法
专利权人:
株式会社ニューフレアテクノロジー
发明人:
山田 拓未,佐藤 裕輔
申请号:
JP20130142616
公开号:
JP6109657(B2)
申请日:
2013.07.08
申请国别(地区):
日本
年份:
2017
代理人:
摘要:
A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a gas supply path connected to an organic metal supply source at a first connection, the gas supply path being connected to a carrier gas supply source, the gas supply path supplies a process gas including organic metal and a carrier gas into the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path discharges the process gas to the outside of the apparatus; a first mass flow controller and a first adjustment device provided at the gas supply path; a second adjustment device provided at the gas discharge path; and a shortcut path connecting the gas supply path to the gas discharge path. One of the first and the second adjustment device is a back pressure regulator, and the other is a mass flow controller.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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