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Dense composite material, method for producing the same, and component for semiconductor production equipment
专利权人:
NGK Insulators; Ltd.
发明人:
Asumi Jindo,Katsuhiro Inoue,Yuji Katsuda
申请号:
US14190531
公开号:
US09188397B2
申请日:
2014.02.26
申请国别(地区):
US
年份:
2015
代理人:
摘要:
A dense composite material of the present invention contains 37% to 60% by mass of silicon carbide grains, also contains titanium silicide, titanium silicon carbide, and titanium carbide, each in an amount smaller than the mass percent of the silicon carbide grains, and has an open porosity of 1% or less. Such a dense composite material is, for example, characterized in that it has an average coefficient of linear thermal expansion at 40° C. to 570° C. of 7.2 to 8.2 ppm/K, a thermal conductivity of 75 W/mK or more, and a 4-point bending strength of 200 MPa or more.
来源网站:
中国工程科技知识中心
来源网址:
http://www.ckcest.cn/home/

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