An electrically conductive oxide comprises In, Al, at least one element M selected from the group consisting of Zn and Mg and O, and also comprises crystalline Al2MO4. A method for producing an electrically conductive oxide comprises: a step of preparing a first mixture comprising an Al2O3 powder and an MO powder, wherein M represents at least one element selected from the group consisting of Zn and Mg (S10); a step of pre-sintering the first mixture to produce a crystalline Al2MO4 powder (S20); a step of preparing a second mixture comprising the crystalline Al2MO4 powder and an In2O3 powder (S30); a step of molding the second mixture to produce a molding (S40); and a step of sintering the molding (S50). Thus, provided are: an electrically conductive oxide which is inexpensive, can be used suitably for a sputtering target, and enables the production of an oxide semiconductor film having high physical properties; a method for producing the electrically conductive oxide; and an oxide semiconductor film.
