A photon detector includes at least one sensor element, formed by a semiconductor material and sensitive to incident radiation, forming a pixel array including sensor pixels； and a detector circuit, situated after the sensor element in the direction of incident radiation, to detect charge carriers generated in the semiconductor material as a result of radiation. The detector circuit includes an integrated circuit with detector pixels in signal communication contact with the sensor pixels； and an enclosure surrounding the integrated circuit and in which the integrated circuit is embedded, and on which is formed on a pixel face facing the sensor element. A contact redistribution layer is formed, in which contact pads are formed for signal-communicatively connecting the detector pixels to the correspondingly assigned sensor pixels, and also conductor tracks are formed for connecting the contact pads to the detector pixels of the integrated circuit.
