Dieter Haas,Pravin K. Narwankar,Randhir P. S. Thakur
申请号：
US12873299
公开号：
US08117987B2
申请日:
2010.08.31
申请国别(地区):
US
年份:
2012
代理人:
摘要：
Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber moving the substrate from the first deposition chamber to a second deposition chamber and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.
