Rohm and Haas Electronic Materials LLC;Dow Global Technologies LLC
发明人:
Park Jong Keun,Li Mingqi,Kwok Amy M.,Hustad Phillip D.
申请号：
US201615296592
公开号：
US10162265(B2)
申请日:
2016.10.18
申请国别(地区):
美国
年份:
2018
代理人:
Baskin Jonathan D.
摘要：
Pattern treatment methods comprise: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises a polymer comprising a surface attachment group for forming a bond with a surface of the patterned feature and a solvent, and wherein the pattern treatment composition is free of crosslinkers; (c) removing residual pattern treatment composition from the substrate with a first rinse agent, leaving a coating of the polymer over and bonded to the surface of the patterned feature; and (d) rinsing the polymer-coated patterned feature with a second rinse agent that is different from the first rinse agent, wherein the polymer has a solubility that is greater in the first rinse agent than in the second rinse agent. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.
