The present invention addresses the problem of providing a crucible for growing a sapphire single crystal, the crucible being optimized for obtaining a sapphire single crystal. This sapphire single-crystal growth crucible (1) has a crucible-shaped base material (3) having molybdenum as a primary component thereof, and a coating layer (5) which is a plating layer provided to at least the internal periphery (3a) of the base material (3), the coating layer (5) comprising tungsten and unavoidable impurities and having an oxygen concentration of less than 0.1% by mass.
