The present disclosure is to provide a measuring method which can measure a gas introduction hole provided in an electrode for a plasma etching device with high accuracy, and to provide an electrode having a highly accurate gas introduction hole. The measuring method of the gas introduction hole provided in the electrode for the plasma etching device according to the present disclosure is a method for measuring the gas introduction hole provided so as to penetrate the substrate of the electrode for the plasma etching device in the thickness direction, including a step of irradiating light from one surface side of the substrate toward the gas introduction hole; a step of obtaining a two-dimensional image of the light transmitted to the other surface side of the substrate via the gas introduction hole; and a step of measuring at least one of the diameter, the inner wall surface roughness and the degree of perpendicularity of the gas introduction hole based on the two-dimensional image.
