Provided is a backing plate obtained by bonding an anticorrosive metal to Mo or a Mo alloy, wherein the backing plate is provided with, on the surface of the Mo or Mo alloy backing plate to be cooled (cooled surface side), a layer having a thickness of 1/40 - 1/8 of the total thickness of the backing plate and formed from an anticorrosive metal obtained by bonding one or more metals selected from Cu, Al, or Ti or an alloy of the same. Also provided is a sputtering target-backing plate assembly wherein a target formed from a low thermal expansion material is bonded to this Mo or Mo alloy backing plate. In semiconductor applications, reductions in size have progressed and control of particles during sputtering has become strict. The purpose of the present invention is to solve the problem of warpage of sputtering targets formed from low thermal expansion materials and problems occurring with respect to the anticorrosive properties of Mo or Mo alloy backing plates.
