[Problem] To provide a large-sized single-crystal sapphire 6 or 8 inches in width, the crystal orientation of which can be measured by parallel light such as a general-purpose laser immediately after growth. [Solution] In the present invention, by growing a single-crystal sapphire ribbon having a surface in which the deviation of C-plane or R-plane crystal orientation is 2° or less with respect to the surface of a single-crystal sapphire ribbon grown by an EFG method, it is possible to obtain a single-crystal sapphire ribbon whereby the crystal orientation can be measured from the reflection angle when a general-purpose laser incident from a direction orthogonal to the surface is reflected.
