リフレッシュ周期を調節する半導体メモリ装置、メモリシステム及びその動作方法

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专利权人:

三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ．

发明人:

金 中植,金 ▲チョル▼,申 相浩

申请号：

JP20130146420

公开号：

JP6271889(B2)

申请日:

2013.07.12

申请国别(地区):

日本

年份:

2018

代理人:

摘要：

A semiconductor memory device includes a cell array and a refresh controller coupled to the cell array. The refresh controller is configured to insert at least one insertion refresh address in a first refresh address sequence based on address information about the cell array to generate a second refresh address sequence and to apply the second refresh address sequence to the cell array, such that selected cells may be refreshed more frequently without increasing an overall refresh rate.

来源网站：

中国工程科技知识中心

来源网址：

http://www.ckcest.cn/home/