A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit.
