Hideo Adachi,Katsuhiro Wakabayashi,Kosei Tamiya,Masaaki Amikura,Kazuya Matsumoto,Ryo Ohta,Mamoru Hasegawa,Hiroshi Ito
申请号：
US12062240
公开号：
US08345512B2
申请日:
2008.04.03
申请国别(地区):
US
年份:
2013
代理人:
摘要：
A capacitive micromachined ultrasonic transducer (cMUT) device, comprising: a cMUT formed on a semiconductor substrate a DC high-voltage generation unit that is provided on the semiconductor substrate and that is for generating a DC high-voltage signal to be superposed on a driving signal for the cMUT a driving signal generation unit that is provided on the semiconductor substrate and that is for generating the driving signal and a superposition unit that is provided on the semiconductor substrate and that is for branching the DC high-voltage signal output from the DC high-voltage generation unit and for superposing one of the branched DC high-voltage signals on the other of the branched DC high-voltage signals via the driving signal generation unit.
