A US element includes a silicon substrate, wherein a lower electrode layer that has a plurality of lower electrode sections, and a plurality of lower wiring sections, and is connected to a lower electrode terminal to which a drive signal and a bias signal are applied, a lower insulating layer, an upper insulating layer in which a plurality of cavities are formed, an upper electrode layer that has a plurality of upper electrode sections and a plurality of upper wiring sections, and is connected to an upper electrode terminal at a ground potential for detecting a capacitance signal, and a protection layer are sequentially stacked on the silicon substrate, and the US element further includes a shield electrode section that is formed at least at an upper side of the lower wiring sections, and is connected to a shield electrode terminal at a ground potential.
