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MAGNETORESISTIVE (MR) SENSORS EMPLOYING DUAL MR DEVICES FOR DIFFERENTIAL MR SENSING
专利权人:
QUALCOMM Incorporated
发明人:
Chen Wei-Chuan,Kim Jung Pill,Kang Seung Hyuk
申请号:
US201816057452
公开号:
US2018372685(A1)
申请日:
2018.08.07
申请国别(地区):
美国
年份:
2018
代理人:
摘要:
Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensing are provided. These MR sensors may be used as biosensors to detect the presence of biological materials as an example. An MR sensor includes dual MR sensor devices that may be tunnel magnetoresistive (TMR) devices or giant magnetoresistive (GMR) devices as examples. The MR devices are arranged such that a channel is formed between the MR devices for receiving magnetic nanoparticles. A magnetic stray field generated by the magnetic nanoparticles causes free layers in the MR devices to rotate in opposite directions, thus causing differential resistances between the MR devices for greater sensing sensitivity. Further, as another aspect, by providing the channel between the MR devices, the magnetic stray field generated by the magnetic nanoparticles can more easily rotate the magnetic moment orientation of the free layers in the MR devices, thus further increasing sensitivity.
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中国工程科技知识中心
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