Microplasma ion source for focused ion beam applications

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专利权人:

Vladimir V. Makarov

发明人:

Vladimir V. Makarov,Sergey Macheret

申请号：

US13407549

公开号：

US08481966B1

申请日:

2012.02.28

申请国别(地区):

US

年份:

2013

代理人:

摘要：

A high pressure microplasma source operating in a normal glow discharge regime is used to produce a cold bright focused beam of Xe+ and/or Xe2+ ions having ion temperature of the order of 0.5-1 eV and a current density on the order of 0.1-1 A/cm2 or higher for focused ion beam applications.

来源网站：

中国工程科技知识中心

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http://www.ckcest.cn/home/