Peter Hackenschmied,Edgar Göderer,Christian Schröter,Matthias Strassburg,Stefan Wirth
申请号：
US14411542
公开号：
US10014430B2
申请日:
2013.07.10
申请国别(地区):
US
年份:
2018
代理人:
摘要：
A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.
