PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element which can reduce heat generation or needless light emission due to increase of a working current when operating a light emitting element and raises absorption efficiency of light when operating a light receiving element, in the case of composing the semiconductor optical integrated element provided with the light emitting element and the light receiving element on a lamination plane composed of an identical layer formed by laminating semiconductor layers.SOLUTION: A semiconductor optical integrated element is composed by disposing within a plane on an identical substrate a light emitting element and a light receiving element which are composed by laminating at least a first conductive-type first cladding layer, an active layer and a second conductive-type second cladding layer on a substrate. In the semiconductor optical integrated element, the active layer has a structure with a conductive type second active region and an un-doped first active region being laminated, in which the second active region has the same conductive type as the first or second cladding layer laminated at a position closest to the second active region.COPYRIGHT: (C)2013,JPO&INPIT【課題】半導体層を積層して形成された同一層構成の積層面に、発光素子と受光素子とが配設された半導体光集積素子を構成するに当たり、発光素子の動作時には動作電流の増大による発熱や余計な発光を抑えることができ、受光素子の動作時には光の吸収効率を高くする半導体光集積素子を提供する。【解決手段】基板上に第1の導電型の第1のクラッド層、活性層、及び、第2の導電型の第2のクラッド層を少なくとも含んで積層されてなる発光素子、及び、受光素子が、同一基板上の面内に配置されて成る半導体光集積素子において、活性層は、導電型の第2の活性領域と、アンドープの第1の活性領域とが積層された構造を備え、第2の活性領域が、第2の活性領域に対し最も近い位置に積層されている第1もしくは第2のクラッド層と同じ導電型とされている。【選択図】 図1
