VERSUM MATERIALS US LLC;AIR PRODUCTS AND CHEMICALS INC.
发明人:
申请号：
IL24600416
公开号：
IL246004D0
申请日:
2016.06.02
申请国别(地区):
IL
年份:
2016
代理人:
摘要：
Chemical Mechanical Planarization (CMP) polishing compositions comprising composite particles, such as ceria coated silica particles, offer tunable polishing removal selectivity values between different films. Compositions enable high removal rates on interconnect metal and the silicon oxide dielectric while providing a polish stop on low-K dielectrics, a-Si and tungsten films. Chemical Mechanical Planarization (CMP) polishing compositions have shown excellent performance using soft polishing pad.
