Rohm and Haas Electronic Materials CMP Holdings, Inc.
发明人:
Ho Lin-Chen,Tsai Wei-Wen,Lee Cheng-Ping
申请号：
US201715815276
公开号：
US9984895(B1)
申请日:
2017.11.16
申请国别(地区):
美国
年份:
2018
代理人:
Piskorski John J.
摘要：
A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; a dihydroxy bis-sulfide; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).
