The purpose of the present invention is to provide a method for pattern measurement and a charged particle radiation device, whereby patterns formed by DSA techniques can be measured and inspected with high accuracy. According to an aspect for achieving the aforementioned purpose, there is proposed hereinbelow a method for pattern measurement wherein a high-molecular weight compound employed in a self-assembled lithographic technique is irradiated with charged particles whereby, of a plurality of polymers forming the high-molecular weight compound, a specific polymer is induced to contract significantly with respect to another polymer, and on the basis of a signal obtained through charged electron beam scanning of a region containing the other polymer, the dimensions between a plurality of edges of the other polymer are measured; or a charged particle radiation device for accomplishing the measurement in question.
