Bahman Hekmatshoartabari,Ali Khakifirooz,Ghavam G. Shahidi,Davood Shahrjerdi
申请号：
US14827256
公开号：
US09472631B2
申请日:
2015.08.14
申请国别(地区):
US
年份:
2016
代理人:
摘要：
High resolution active matrix nanowire circuits enable a flexible and stretchable platform for probing neural circuits. Fabrication of such circuits includes forming an array of transistors using a semiconductor-on-insulator substrate. Electrically isolated arrays of vertically extending, electrically conductive wires are formed from a doped, electrically conductive layer within the substrate, each of the arrays of wires being electrically connected to a transistor in the array of transistors.
