Lei Guo,Praket P. Jha,Milind Gadre,Deenesh Padhi,Tza-Jing Gung
申请号：
US16120867
公开号：
US10595477B2
申请日:
2018.09.04
申请国别(地区):
US
年份:
2020
代理人:
摘要：
Aspects disclosed herein relate to methods of depositing pure silicon oxide on a substrate using Octamethylcyclotetrasiloxane (OMCTS) precursor. In one aspect, the method generally includes positioning a substrate in a processing chamber, introducing an oxygen-containing gas into the processing chamber, introducing OMCTS precursor into the processing chamber, and reacting the oxygen-containing gas and the OMCTS precursor to remove carbon and deposit pure silicon oxide on the substrate.
